非極性GaN基板上への選択MOVPE成長

摘要

The selective-area growth (SAG) on nonpolar (10-10) (20-21) (20-2-1) GaN substrates by MOVPE was demonstrated, and the facet structures were investigated. The different structures depending on the SiO_2-mask stripe directions were observed. Anisotropic structures with (000-1) and (10-11) facets were obtained for all of the nonpolar GaN substrates along the [-12-10] direction. On the other hand, {11-20} and (20-2-1) facets appeared for SAG on the (20-21) GaN and (20-2-1) GaN substrates with SiO_2 mask along the [-1014] and [10-14] directions, respectively.%(10-10) GaNや(20-21) GaN, (20-2-1)GaNをはじめとする非極性GaN基板上へのGaNの選択MOVPE成長を行い，それによつて形成されるファセット構造を明らかにした.SiO_2マスクのストライプ方向によって得られる構造は異なり，[-12-10]方向の場合には，全ての非極性GaN基板において主に(000-1)と(10-11)ファセットで構成される非対称な構造が得られた.一方，[-1014]及び[10-14]方向の場合には，(20-21)GaNでは{11-20}ファセット，(20-2-1)GaNでは(20-2-1)ファセットが大きく出現した.