C帯220W高効率GaN増幅器

摘要

In this paper, a high power and high efficiency fully internally-matched GaN FET operating at C-band is presented. Recently, many over 100W output power GaN HEMT amplifiers have been developed. High efficiency operation is necessary for such high power GaN HEMT amplifiers since power dissipation becomes a serious problem. In this work, a C-band GaN amplifier is designed so that harmonic impedances are tuned to high efficiency and combining loss is maintained minimum. As a result, 224W output power and 56% power added efficiency was successfully obtained, which is 20pts higher than previous report of ours.%GaN HEMTはGaAsの10倍以上の出力電力密度が得られることから100W超出力のマイクロ波帯高出力増幅器として盛んに研究•開発が進められている.GaN HEMTは主と,して100Wを超えるような大出力での利用が期待されているが出力密度に伴い発熱密度も高くなることから高出力に加えて高効率動作が必要となる.今回,C帯にて高調波負荷整合と合成損の低減を考慮した設計を行うことでC帯220WGaN増幅器について2007年に既報の約1.5倍の高効率が得られたので報告する.