Electrodeposition of Ga_2O_3 Thin Films from Aqueous Gallium Sulfate Solutions

摘要

硫酸ガリゥム水溶液に少量のNa_2S_2O_3とH_2O_2.を加えた水溶液から電解析出によって酸化ガリゥム薄膜を堆積し、堆積電圧、溶液組成、堆積時間などの諸パラメータが堆積膜の性質に与える影響を調べた。オージェ電子分光により組成を評価した。堆積膜は酸素過剰組成であり、少量の硫黄を含むことがある。光電気化学測定に より、堆積膜がn型の伝導性と光伝導性を持つことが示された。%Gallium oxide (Ga_2O_3) thin films were prepared by employing facile electrodeposition technique from aqueous gallium sulfate solution with small amount of Na_2O_3 and H_2O_2. Effects of different deposition parameters such as deposition voltage, amount of H_2O_2 and deposition time were investigated and presented in this report. Sulfur peak could appear in the Auger electron spectroscopy (AES) spectra of the films deposited using Ga_2(SO_4)_3-Na_2S_2O_3 H_2O_2 solution depending on the applied voltage and deposition time. As-deposited films showed oxygen-rich characteristics as evident in AES result The films exhibited n-type conductivity and good photosensitivity from photoelectrochemical measurement.