Rotating vibration type silicon angular rate sensor by deep ICPRIE and XeF_2 gas etching

摘要

A rotating vibration type silicon angular rate sensor was fabricated by deep ICPRIE and XeF_2 gas etching. Using these two etching methods, a sensor which has beams in the center of the thickness of its mass could be fabricated very precisely. This sensor has a glass-silicon-glass structure and its resonator is excited electrostatically and the vibration caused by the angular rate is measured capacitively. The angular rate was measured in a range between -250 to +250 deg./sec. and measured sensitivity was 2.1fF/(deg./sec.).