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首页> 外文期刊>IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control >Propagation characteristics of shear horizontal surface acoustic waves in (11 2 0) ZnO film/silica glass substrate structures
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Propagation characteristics of shear horizontal surface acoustic waves in (11 2 0) ZnO film/silica glass substrate structures

机译:(11 2 0)ZnO薄膜/石英玻璃衬底结构中剪切水平声表面波的传播特性

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摘要

This paper presents the propagation characteristics of the shear horizontal surface acoustic wave (SH-SAW) in ZnO (0deg, 90deg, psi) (11 2macr 0) textured ZnO films. ZnO (0deg, 90deg, 0deg) film/interdigital transducer (IDT) electrode/silica glass substrate structures were fabricated by RF magnetron sputtering. Experimental results demonstrate that SH-SAW was clearly excited in these structures. We also theoretically estimated the electromechanical coupling coefficient K2 in the ZnO (0deg, 90deg, psi) film/silica glass substrate structure. The theoretical results show that the IDT electrode/ZnO (0deg, 90deg, 55deg) film/silica glass substrate structure had a relatively high K2 value of 3.4%. Moreover, the shear horizontal displacement component of the SH-SAW in this structure is much larger than the transverse and longitudinal displacement components. This structure could be used in SH-SAW sensors for evaluating the electrical properties of liquids.
机译:本文介绍了水平剪切表面声波(SH-SAW)在ZnO(0deg,90deg,psi)(11 2macr 0)纹理化ZnO薄膜中的传播特性。 ZnO(0度,90度,0度)薄膜/叉指式换能器(IDT)电极/石英玻璃基板结构是通过RF磁控溅射法制成的。实验结果表明,SH-SAW在这些结构中明显被激发。我们还从理论上估算了ZnO(0deg,90deg,psi)薄膜/石英玻璃基板结构中的机电耦合系数K2。理论结果表明,IDT电极/ ZnO(0度,90度,55度)薄膜/石英玻璃基板结构的K2值相对较高,为3.4%。此外,在这种结构中,SH-SAW的剪切水平位移分量远大于横向和纵向位移分量。此结构可用于SH-SAW传感器中,以评估液体的电性能。

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