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Phase noise in RF and microwave amplifiers

机译:射频和微波放大器中的相位噪声

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摘要

Understanding amplifier phase noise is a critical issue in many fields of engineering and physics, such as oscillators, frequency synthesis, telecommunication, radar, and spectroscopy; in the emerging domain of microwave photonics; and in exotic fields, such as radio astronomy, particle accelerators, etc. Focusing on the two main types of base noise in amplifiers, white and flicker, the power spectral density of the random phase ??????(t) is S??????( f ) = b0 + b?????????1/f. White phase noise results from adding white noise to the RF spectrum in the carrier region. For a given RF noise level, b0 is proportional to the reciprocal of the carrier power P0. By contrast, flicker results from a near-dc 1/f noise-present in all electronic devices-which modulates the carrier through some parametric effect in the semiconductor. Thus, b-1 is a parameter of the amplifier, constant in a wide range of P0. The consequences are the following: Connecting m equal amplifiers in parallel, b-1 is 1/m times that of one device. Cascading m equal amplifiers, b-1 is m times that of one amplifier. Recirculating the signal in an amplifier so that the gain increases by a power of m (a factor of m in decibels) as a result of positive feedback (regeneration), we find that b?????????1 is m2 times that of the amplifier alone. The feedforward amplifier exhibits extremely low b-1 because the carrier is ideally nulled at the input of its internal error amplifier. Starting with an extensive review of the literature, this article introduces a system-oriented model which describes the phase flickering. Several amplifier architectures (cascaded, parallel, etc.) are analyzed systematically, deriving the phase noise from the general model. There follow numerous measurements of amplifiers using different technologies, including some old samples, and in a wide frequency range (HF to mic- owaves), which validate the theory. In turn, theory and results provide design guidelines and give suggestions for CAD and simulation. To conclude, this article is intended as a tutorial, a review, and a systematic treatise on the subject, supported by extensive experiments.
机译:在许多工程和物理领域,例如振荡器,频率合成,电信,雷达和光谱学,了解放大器的相位噪声是一个关键问题。在微波光子学的新兴领域;集中在放大器的两种基本类型的噪声,即白噪声和闪烁噪声,随机相位的功率谱密度(t)为S。 ??????(f)= b 0 + b ????????? 1 / f。白相位噪声是由于将白噪声添加到载波区域中的RF频谱而产生的。对于给定的RF噪声水平,b 0 与载波功率P 0 的倒数成正比。相比之下,闪烁是由所有电子设备中存在的接近DC 1 / f噪声引起的,该噪声通过半导体中的某些参数效应来调制载波。因此,b -1 是放大器的参数,在很大的P 0 范围内保持恒定。结果是:并行连接m个相等的放大器,b -1 是一台设备的1 / m倍。级联m个相等的放大器,b -1 是一个放大器的m倍。在正反馈(再生)的结果下,在放大器中对信号进行再循环,使增益增加m的幂(分贝为m的倍数),我们发现b ????????? 1 是单独放大器的m 2 倍。前馈放大器的b -1 极低,因为理想情况下,载波在其内部误差放大器的输入处为零。从大量文献综述开始,本文介绍了一种描述相位闪烁的面向系统的模型。系统地分析了几种放大器架构(级联,并行等),从通用模型中得出相位噪声。接下来是使用不同技术对放大器进行的大量测量,包括一些较旧的样本,并在很宽的频率范围(HF到微波)中进行了验证,从而验证了这一理论。反过来,理论和结果也提供了设计指南,并为CAD和仿真提供了建议。总而言之,本文旨在作为该主题的教程,评论和系统论述,并辅以大量实验。

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