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首页> 外文期刊>IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control >Equivalent Circuit Models for Large Arrays of Curved and Flat Piezoelectric Micromachined Ultrasonic Transducers
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Equivalent Circuit Models for Large Arrays of Curved and Flat Piezoelectric Micromachined Ultrasonic Transducers

机译:大型弯曲和扁平压电微机械超声换能器的等效电路模型

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摘要

Equivalent circuit models of large arrays of curved (spherical shape) and flat piezoelectric micromachined ultrasonic transducers (pMUTs) have been developed for complex pMUT arrays design and analysis. The exact solutions for circuit parameters in the electromechanical domain, such as mechanical admittance, input electrical impedance, and electromechanical transformer ratio, were analytically derived. By utilizing the array solution methods previously established for the thickness-mode piezoelectric devices and capacitive micromachined ultrasonic transducers (cMUTs), the single pMUT circuit model can be extended to models for array structures. The array model includes both the self- and mutual-acoustic radiation impedances of individual transducers in the acoustic medium. Volumetric displacement, induced piezoelectric current, and pressure field can be derived with respect to the input voltage matrix, material, and geometrical properties of each individual transducer and the array structure. As such, the analytical models presented here can be used as a guideline for analyses and design evaluations of large arrays of curved and flat pMUTs efficiently and can be further generalized to evaluate other pMUT architectures in the form of single devices or arrays.
机译:已开发出大的弯曲(球形)阵列和平面压电微机械超声换能器(pMUT)的等效电路模型,用于复杂的pMUT阵列设计和分析。通过分析得出了机电领域中电路参数的精确解,例如机械导纳,输入电阻抗和机电变压器比。通过利用先前为厚度模式压电器件和电容微机械超声换能器(cMUT)建立的阵列解决方案方法,可以将单个pMUT电路模型扩展为阵列结构模型。阵列模型包括声学介质中各个换能器的自声和互声辐射阻抗。可以相对于每个单独换能器和阵列结构的输入电压矩阵,材料和几何特性得出体积位移,感应压电电流和压力场。这样,此处介绍的分析模型可以用作有效地分析和设计大型弯曲和平坦pMUT阵列的指南,并且可以进一步推广以单个设备或阵列的形式评估其他pMUT体系结构。

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