Test Structure Design Considerations for RF-GV Measurements on Leaky Dielectrics

摘要

We present an MOS capacitance-voltage measurement methodology that, contrary to present methods, is highly robust against gate leakage current densities up to 1000 A/cm{sup}2. The methodology features specially designed RF test structures and RF measurement frequencies. It allows MOS parameter extraction in the full range of accumulation, depletion, and inversion.