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首页> 外文期刊>IEEE Transactions on Semiconductor Manufacturing >Flow Analysis and Relative Humidity (RH) Measurement in the Horizontal Plane of a Front Opening Unified Pod (FOUP)
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Flow Analysis and Relative Humidity (RH) Measurement in the Horizontal Plane of a Front Opening Unified Pod (FOUP)

机译:前开放统一吊舱水平面(FOUP)水平平面中的流量分析和相对湿度(RH)测量

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摘要

Moisture removal techniques such as purge have been developed for the front opening unified pod (FOUP) in the semiconductor industry. The FOUP purge can significantly increase the quality of integrated circuit (IC) products. An experimental model of a simulated clean room, was designed at Taipei Tech. A mini environment (ME) and a FOUP were installed inside the model. Smoke flow visualization technique was performed with the assistance of an innovative laser light sheet generation system. A homemade smoke generator simulates the moist air flow pattern into the FOUP. The FOUP top view flow pattern was recorded by a Hamamatsu digital camera. The particle image velocimetry (PIV) in the FOUP horizontal plane was analyzed. Moreover, the relative humidity (RH) was monitored inside the FOUP. The results show that a purge flow rate of 200 LPM is the optimum purge flow rate for moisture removal performance inside the FOUP. The findings of the present study could significantly increase the quality of chip products in semiconductor manufacturing, decreasing product defect rates and significantly reducing energy consumption.
机译:用于半导体工业中的前开放统一吊舱(FOUP)开发了净化技术,例如吹扫的技术。 FOUP清除可以显着提高集成电路(IC)产品的质量。模拟洁净室的实验模型是在台北科技的。模型内部安装了迷你环境(ME)和FOUP。在创新的激光表生成系统的帮助下进行烟雾性能可视化技术。自制烟雾发生器模拟潮湿的空气流动图案进入FOUP。 FOUP顶视图流动模式由Hamamatsu数码相机记录。分析了FOUP水平平面中的粒子图像速度(PIV)。此外,在FOUP内监测相对湿度(RH)。结果表明,200LPm的吹扫流速是FOUP内部水分清除性能的最佳吹扫流速。本研究的发现可以显着提高半导体制造中的芯片产品的质量,降低产品缺陷率和显着降低能量消耗。

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