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机译:1T1MTJ STT-RAM的温度影响分析和访问可靠性增强
School of Electrical and Information Engineering, Beihang University, Beijing, China;
School of Electrical and Information Engineering, Beihang University, Beijing, China;
School of Computer Science and Engineering, Beihang University, Beijing, China;
LIRMM Laboratory, CNRS/University of Montpellier, Montpellier, France;
School of Electrical and Information Engineering, Beihang University, Beijing, China;
Switches; Temperature measurement; Integrated circuit modeling; Tunneling magnetoresistance; Thermal stability; Magnetic tunneling;
机译:自适应增量步进脉冲编程大小对电阻随机存取存储器的可靠性分析和良率提高
机译:延长微处理器的寿命可靠性:减轻负偏置温度不稳定性的影响
机译:低温冲击下钢筋混凝土结构强度和可靠度的概率分析
机译:通过ECC和访问方案优化来增强STT-RAM的可靠性
机译:具有温度感知功能的VLSI设计可降低功耗并提高可靠性。
机译:非线性振动冲击过程提高接触式MEMS装置可靠性的数值分析
机译:1T1MTJ STT-RAM的温度影响分析和访问可靠性增强