Development of a Scalable Power Semiconductor Switch (SPSS)

摘要

This paper presents the design and development of a 4800-V, 300-A, 10-kHz scalable power semiconductor switch (SPSS) based on series connecting low voltage insulated gate bipolar transistors (IGBTs). The static and dynamic voltage balance among IGBTs is achieved using a hybrid approach of active clamp circuit and an active gate control that is also effective during tail current phase. The developed SPSS derives its control power directly from the main power bus. Control, packaging, and thermal characteristics are an integral part of the SPSS design. From a user's standpoint, the SPSS is a three-terminal optically controlled high-power switch. Experimental evaluation of the prototype SPSS shows it fully achieved the design objectives. In principle, the approach can be extended to building switches with higher voltages, currents, and switching frequencies, or even with other types of devices than IGBTs