On the Design Process of a 6-kVA Quasi-Z-inverter Employing SiC Power Devices

摘要

This paper presents the design process of a 6-kVA quasi-Z-source inverter built with SiC power devices, in particular, employing SiC MOSFETs and SiC Schottky diodes. The main design target is to find the optimal parameters and a good agreement between the efficiency and power density of the converter. The performance of the system may be influenced not only by the switching frequency but also from the specific pulsewidth modulated (PWM) method or type of SiC MOSFET, and, therefore, various design cases are analyzed. At a final step, the 6 kVA/3 × 400 VAC inverter employing the 80 mΩ SiC MOSFETs and operating at 100 kHz with the minimum switching number method is chosen for investigation and a laboratory prototype is built. From experiments, the high performance of the designed system is confirmed. More specifically, it is shown that an efficiency above 95.6% (at 400 VDC, B = 1.9) and a power density higher than 2 kW/dm3 have been reached. Last but not least, the obtained results, which can be recognized as leading in the area of impedance source converters, show the great benefits gained by employing the new power semiconductor devices.