Bootstrap Voltage and Dead Time Behavior in GaN DC–DC Buck Converter With a Negative Gate Voltage

摘要

The low threshold voltage of Gallium Nitride enhancement mode FETs is a concern in synchronous dc-dc buck converters. This paper presents a converter using a gate drive with a negative biased gate voltage on the low-side FET to improve the dV/dt robustness. The resulting much larger voltage drop during the dead time conduction is a concern as it can quickly overcharge the bootstrap capacitor voltage. This paper demonstrates that with a negative biased gate voltage, the rise in the bootstrap capacitor voltage is predominantly caused by the change in effective dead time conduction due to a variation in output load. A spice model to estimate the change is presented and verified. This paper also found that a change in the bootstrap capacitor voltage must be prevented as it leads to a significant change in turn-on dynamics, resulting in higher dV/dt stress with an increase in output load. To prevent a change in bootstrap capacitor voltage, different techniques such as Zener diode clamping and an external free-wheeling Schottky diode are tested and discussed. Finally, a modification of a standard bootstrap circuit using a series inductor is proposed and tested. It has been found to be the most effective method in preventing a variation in the bootstrap capacitor voltage and should be included when using a negative gate drive in a GaN dc-dc buck converter.