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机译:老化对SiC MOSFET温度敏感电参数的影响
Department of Electrical and Computer Engineering The University of Texas at Dallas Richardson TX USA;
Department of Electrical and Computer Engineering The University of Texas at Dallas Richardson TX USA;
Department of Electrical and Computer Engineering The University of Texas at Dallas Richardson TX USA;
Logic gates; Temperature measurement; Silicon carbide; MOSFET; Temperature sensors; Junctions; Aging;
机译:SiC功率MOSFET的温度敏感电参数研究
机译:研究SiC MOSFET体二极管的发光作为对温度敏感的电参数
机译:栅极驱动器电压对温度敏感电参数的影响,以监测SiC功率MOSFET的状态
机译:SiC-MOSFET中逆变敏感电气参数的在线监测
机译:6H-αSiC的热氧化电钝化及其表征和在SiC MOSFET中的应用。
机译:对放射治疗部门进行体内剂量测定的预先校准的一次性OneDosePlus MOSFET系统进行多阶段评估和调试
机译:SiC电源MOSFET温度敏感电气参数的研究