CdTe low level gamma detectors based on a new crystal growth method

摘要

A high-pressure, vertical Bridgman approach was successfully applied to the growth of CdTe gamma-ray detector crystals for application to background-level, low-bias dosimeters. Detectors of 1.8-mm thickness were uniformly able to detect background radiation at bias levels below 10 V and exhibited other desirable features. The growth method makes it possible to produce high-quality, uniform crystals of large volume and has the potential for increasing the availability and lowering the costs of CdTe detectors.