Evidence of the ion's impact position effect on SEB in N-channel power MOSFETs

摘要

Triggering of Single Event Burnout (SEB) in Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is studied by means of experiments and simulations based on real structures. Conditions for destructive and nondestructive events are investigated through current duration observations. The effect of the ion's impact position is experimentally pointed out. Finally, further investigation with 2D MEDICI simulations show that the different regions of the MOSFET cell indeed exhibit different sensitivity with respect to burnout triggering.