Silicon photodiodes (planar PIN) are employed for the readout of scintillation shower counters. We have already reported on a new doping method called molecular layer doping (MLD) which has been developed for very large scale integrated (VLSI) technologies. In this study, several types of PIN photodiodes, in which a p/sup +/ layer was formed by MLD (MLD-PIN) or BF/sub 2/ ion implantation (BF/sub 2/ I/I-PIN), have been examined. The MLD-PIN has a shallow p/sup +/ junction depth (x/sub j/) with sufficient high surface concentration, and simply and easily provides good performance for short-wavelength photosensitivity.
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机译：硅光电二极管（平面PIN）用于闪烁闪烁计数器的读数。我们已经报道了一种称为分子层掺杂（MLD）的新掺杂方法，该方法是为超大规模集成（VLSI）技术开发的。在这项研究中，已经使用了几种类型的PIN光电二极管，其中ap / sup + /层通过MLD（MLD-PIN）或BF / sub 2 /离子注入（BF / sub 2 / I / I-PIN）形成。检查。 MLD-PIN具有较浅的p / sup + /结深度（x / sub j /）和足够高的表面浓度，并且简单，容易地为短波长光敏性提供良好的性能。
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