Radiation damage factor for ion-implanted silicon detectors irradiated with heavy ions

摘要

Ion-implanted silicon detectors were irradiated with 18-150 MeV /sup 16/O, 20 MeV /sup 40/Ar, and 53 MeV /sup 110/Xe. A linear increase of the leakage current was observed as a function of the particle fluence up to 2.2/spl times/10/sup 8/ cm/sup -2/. Extracted damage factors are proportional to the averaged nuclear stopping power over five orders of magnitude covering heavy ions studied in the present work and also protons of 25-800 MeV energies.