Ionizing dose hardness assurance methodology for qualification of a BiCMOS technology dedicated to high dose level applications

摘要

This work concerns the development of a radiation hardness assurance methodology specially devoted to CMOS, JFET and bipolar transistors used in high total dose level environments. On the basis of recent studies, high temperature, high dose rate irradiations were performed. We propose a test procedure which combines high temperature irradiations and isochronal anneals for the qualification.