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首页> 外文期刊>IEEE Transactions on Nuclear Science >Experimentally Measured Input Referred Voltage Offsets and Kickback Noise in RHBD Analog Comparator Arrays
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Experimentally Measured Input Referred Voltage Offsets and Kickback Noise in RHBD Analog Comparator Arrays

机译:RHBD模拟比较器阵列中的实验测量输入参考电压偏移和反冲噪声

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摘要

Analog comparator arrays fabricated on a bulk CMOS 130-nm are measured to quantify input-referred offsets due to transistor variation and kickback noise. Comparators using RHBD edgeless and conventional two-edge transistors are compared to determine the impact on the circuit behavior. Both random variation and kickback noise are slightly larger than for an equivalent design using two-edge transistors. The input-referred offsets are shown to be completely systematic.
机译:测量在130纳米体CMOS上制造的模拟比较器阵列,以量化由于晶体管变化和反冲噪声引起的输入参考偏移。比较使用RHBD无边缘晶体管和传统两边缘晶体管的比较器,以确定对电路性能的影响。与使用两边缘晶体管的等效设计相比,随机变化和反冲噪声都稍大。输入参考偏移显示为完全系统的。

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