Low-Energy Proton-Induced Single-Event-Upsets in 65 nm Node, Silicon-on-Insulator, Latches and Memory Cells

摘要

Experimental data are presented showing that low energy ( $≪ 2$ MeV) proton irradiation can upset exploratory 65 nm node, Silicon-On-Insulator circuits. Alpha particle SER data, modeling and simulation results provide a plausible mechanism. This work suggests that track structures need to be understood and effectively modeled, especially for small, modern devices.