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首页> 外文期刊>IEEE Transactions on Nuclear Science >Review and Analysis of the Radiation-Induced Degradation Observed for the Input Bias Current of Linear Integrated Circuits
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Review and Analysis of the Radiation-Induced Degradation Observed for the Input Bias Current of Linear Integrated Circuits

机译:线性集成电路输入偏置电流观察到的辐射引起的退化的回顾与分析

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摘要

It is shown that the variety of shapes of the input current versus dose curve observed in several ICs is due to circuit effects, depending on the architecture, the value of the currents and the bias conditions. When stages are cascaded, the degradation of the second stage may add or subtract current to the collector current of the input transistor. The variations of the collector currents can be evaluated using the variations of the supply current. It is then possible to model the compensation effects using basic equations and study the impact of irradiation conditions. In some cases, the effect of biasing the circuit during irradiation is to reduce the compensation mechanism leading to an stronger increase in the input current. When a peak shaped degradation curve is recorded, annealing may either induce an additional degradation or a recovery depending on which side of the peak irradiation has brought the circuit.
机译:结果表明,在几种IC中观察到的输入电流与剂量关系曲线的形状变化是由于电路效应所致,具体取决于架构,电流值和偏置条件。当级级联时,第二级的降级可以向输入晶体管的集电极电流增加或减少电流。集电极电流的变化可以使用电源电流的变化进行评估。然后可以使用基本公式对补偿效果进行建模,并研究辐照条件的影响。在某些情况下,在辐照期间对电路进行偏置的作用是减少补偿机制,从而导致输入电流的增加。记录峰形退化曲线时,退火可能会导致额外的退化或恢复,具体取决于峰辐照的哪一侧将电路带入。

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