Parametric Variability Affecting 45 nm SOI SRAM Single Event Upset Cross-Sections

摘要

SEU simulation analyses of a commercial 45 nm CMOS SOI SRAM cell compared to test data highlight the need to better understand and account for variation in inter-cell hardness, and uncertainty in energy deposition in small sensitive volumes. Simulations indicate that operating voltage and body resistance have the largest impact on simulated cell hardness.