Reconciling 3-D Mixed-Mode Simulations and Measured Single-Event Transients in SiGe HBTs

摘要

Comprehensive 3-D mixed-mode simulations, including accurate modeling of parasitic elements present in the experimental setup, resulted in close agreement between simulated and experimentally-measured heavy-ion-induced transients in first-generation SiGe HBTs. We have identified the key factors affecting previous simulations and observed experimental differences. The approach employed is also applicable to other submicron, high-speed technologies. Furthermore, we present a plausible answer to the previously unexplained issue of higher collector currents in single-transistor SiGe HBT single-event transients under positive collector bias. The new observations and conclusions facilitate improved understanding and potential mitigation options.