Technology and Performance Study of a Two-Line Monolithic X- and $gamma$-Ray Detection Chip Based on Semi-Insulating GaAs

摘要

Technology, electrical characteristics and detection performance of a novel recently developed and fabricated 64-pixel two-line array chip for detection of X- and $gamma$ -rays based on semi-insulating GaAs from three different producers are reported and compared. The chip has dimensions of cca (16 $,times,$4$,times,$0.25) mm$^{3}$ . A single pixel has an active area of (300$,times,$ 190) $mu$m$^{2}$ with a pitch of 250 $mu$m. The distance between two lines is 360 $mu$m. The reverse current density (at 295 K) of a single pixel at a bias voltage of 200 V ranges from 90 to 140 nA/mm $^{2}$. The breakdown voltage ranges between 250 and 500 V. Pulse-height spectra of radionuclide $^{241}!$ Am in the top irradiation mode are demonstrated. The best spectrometric performance is achieved with the Freiberger material. The charge collection efficiency of about 85% and energy resolution in the full width at half maximum better than 8.6 keV for the 59.5 keV photopeak was reached at 295 K and bias of 300 V.