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首页> 外文期刊>Nuclear Science, IEEE Transactions on >A Novel 65 nm Radiation Tolerant Flash Configuration Cell Used in RTG4 Field Programmable Gate Array
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A Novel 65 nm Radiation Tolerant Flash Configuration Cell Used in RTG4 Field Programmable Gate Array

机译:RTG4现场可编程门阵列中使用的新型65 nm耐辐射闪存配置单元

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摘要

The newly introduced radiation-tolerant flash-based FPGA, RTG4, uses a novel configuration cell design composed of a NMOS switch controlled by a totem pole p-channel flash and n-channel flash construction. Its radiation tolerance is far superior to that in the present available Flash-based FPGA. This paper describes the radiation hardening by design (RHBD) process for the new flash-based configuration cell. A subtle and unique retention issue was found and resolved through studying physical mechanisms and conducting experiments.
机译:新推出的基于辐射辐射的基于Flash的FPGA RTG4采用了一种新颖的配置单元设计,该设计单元由一个由图腾柱p通道Flash和n通道Flash结构控制的NMOS开关组成。它的辐射耐受性远远优于目前可用的基于Flash的FPGA。本文介绍了新的基于闪存的配置单元的设计辐射强化(RHBD)工艺。通过研究物理机制和进行实验,发现并解决了一个细微而独特的保留问题。

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