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首页> 外文期刊>IEEE transactions on nanotechnology >Vertically oriented carbon nanofiber based nanoelectromechanical switch
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Vertically oriented carbon nanofiber based nanoelectromechanical switch

机译:垂直取向的碳纳米纤维基纳米机电开关

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摘要

We present a proof-of-principle study of a vertically aligned carbon nanofiber switch and study relevant parameters via a model for a static switch. Vertically aligned freestanding carbon nanofibers are produced by plasma-enhanced chemical vapor deposition (PECVD) and their deflection under applied voltage is measured using an optical microscope. The deflection is compared with a static force balance model, which successfully predicts the switching behavior assuming a nanofiber modulus of 40 GPa, which is consistent with independent modulus measurements made in our laboratory. The model is then extended to explore constraints for implementing a vertically aligned nanotube switch into present CMOS process flow. Carbon nanofibers of less than 40 nm in diameter, which may be grown by current PECVD technology, are shown to be acceptable for device integration for current and future CMOS scaling. To accommodate varying tube sizes and architectures, a basic scaling relationship is developed to relate CMOS via parameters and nanofiber characteristics to programming voltage.
机译:我们提出了垂直排列的碳纳米纤维开关的原理验证研究,并通过静态开关模型研究了相关参数。垂直排列的独立式碳纳米纤维是通过等离子体增强化学气相沉积(PECVD)生产的,并使用光学显微镜测量其在施加电压下的挠度。将该挠度与静态力平衡模型进行比较,该模型在假设纳米纤维模量为40 GPa的情况下成功预测了开关行为,这与我们实验室进行的独立模量测量结果一致。然后对该模型进行扩展,以探索将垂直对齐的纳米管开关实施到当前CMOS工艺流程中的约束。直径小于40 nm的碳纳米纤维(可以通过当前的PECVD技术生长)已被证明可以用于当前和未来CMOS缩放的设备集成。为了适应变化的管尺寸和架构,开发了一种基本的比例关系,以通过参数和纳米纤维特性将CMOS与编程电压相关联。

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