A process-dependent worst-case analysis for MMIC design based on a handy MESFET simulator

摘要

The design of inexpensive MMIC modules implies a practical use of worst-case analysis. A reliable equivalent circuit model based on the unavoidable dispersion of uncorrelated technological parameters is proposed. The method relies on a convenient MESFET simulator which provides the DC, RF and noise parameters for any bias conditions. The input data are geometrical or electrical information readily available to the designer. The results of using the proposed model are compared with experimental data from several GaAs MMIC manufacturers. The model was also successfully applied to the design of a monolithic C-band amplifier. The forecasts of the worst-case analysis are compared with the experimental results for this amplifier.