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LSE- and LSM-mode sheet impedances of thin conductors

机译:薄导体的LSE和LSM模式薄层阻抗

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The sheet resistance of very thin conductors is commonly taken as R=1//spl sigma/t. We show that the sheet impedance, defined as the ratio of the tangential electric field at the surface of the conductor to the conduction current per unit length in the conductor, depends on the field distribution. The LSE (TE-to-y) and LSM (TM-to-y) modes used in the spectral domain immittance approach have sheet impedances which are distinct for vanishingly small or large values of the wavenumber /spl gamma/ in the medium surrounding a thin conductor. In the limit /spl gamma//spl rarr/0 and t//spl delta//spl Lt/1, Z/sub sh//sup LSE/ approaches R=1//spl sigma/t while Z/sub sh//sup LSM//spl rarr/2//spl sigma/t. In the limit /spl gamma//spl rarr//spl infin/ and t//spl delta//spl Lt/1, Z/sub sh//sup LSE/ approaches R=2//spl sigma/t and Z/sub sh//sup LSM/ approaches R=1//spl sigma/t. When t//spl delta//spl Gt/1, the sheet impedance approaches the surface impedance Z/sub s/=(1+j)//spl sigma//spl delta/ and is independent of the field distribution.
机译:通常将非常薄的导体的薄层电阻设为R = 1 // spl sigma / t。我们表明,薄层阻抗(定义为导体表面的切向电场与导体中每单位长度的传导电流之比)取决于电场分布。频谱域阻抗法中使用的LSE(TE-to-y)和LSM(TM-y)模式具有薄层阻抗,这对于波数/ spl gamma /消失在介质周围的介质中的消失是很小的还是很大的。细导体。在极限/ spl gamma // spl rarr / 0和t // spl delta // spl Lt / 1中,Z / sub sh // sup LSE /接近R = 1 // spl sigma / t,而Z / sub sh / / sup LSM // spl rarr / 2 // spl sigma / t。在极限/ spl gamma // spl rarr // spl infin /和t // spl delta // spl Lt / 1中,Z / sub sh // sup LSE /接近R = 2 // spl sigma / t和Z / sub sh // sup LSM /接近R = 1 // spl sigma / t。当t // spl delta // spl Gt / 1时,薄层阻抗接近表面阻抗Z / sub s / =(1 + j)// spl sigma // spl delta /,并且与电场分布无关。

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