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首页> 外文期刊>IEEE Transactions on Microwave Theory and Techniques >Quasi-static analysis of coupled microstrip lines with asymmetrical finite metallization thickness
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Quasi-static analysis of coupled microstrip lines with asymmetrical finite metallization thickness

机译:具有不对称有限金属化厚度的耦合微带线的准静态分析

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摘要

This paper describes the quasi-static analysis of coupled microstrip lines with asymmetrical finite metallization thickness. A generalized mode-matching method extended from the conventional mode-matching method has been used to analyze the inhomogeneous structure with arbitrary metallization thickness and is validated through comparison with those from other available results. This method cannot only provide a simple approach to the quasi-static analysis of the inhomogeneous structures with arbitrary metallization thickness, but can also be applied to analyze the effect of metal penetration depth into the substrate. The results show that the asymmetrical finite metallization thickness and metal penetration depth into the substrate can be newly added to the quasi-static design parameters of coupled microstrip lines.
机译:本文描述了具有非对称有限金属化厚度的耦合微带线的准静态分析。从常规模式匹配方法扩展而来的广义模式匹配方法已用于分析具有任意金属化厚度的不均匀结构,并通过与其他可用结果的比较进行了验证。该方法不仅为金属化厚度任意的不均匀结构的准静态分析提供了一种简单的方法,而且还可以用于分析金属渗入深度对基体的影响。结果表明,可以将非对称有限金属化厚度和金属对基底的渗透深度重新添加到耦合微带线的准静态设计参数中。

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