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首页> 外文期刊>IEEE Transactions on Microwave Theory and Techniques >Rigorous modeling of packaged Schottky diodes by the nonlinear lumped network (NL/sup 2/N)-FDTD approach
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Rigorous modeling of packaged Schottky diodes by the nonlinear lumped network (NL/sup 2/N)-FDTD approach

机译:非线性集总网络(NL / sup 2 / N)-FDTD方法对封装的肖特基二极管进行严格建模

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Recently, a novel method has been proposed that allows general linear lumped networks to be incorporated within finite-difference time-domain (FDTD) simulators. In this paper, this method is extended in such a way as to represent two-terminal nonlinear lumped networks in a single FDTD grid cell. In particular, the extended method is applied to the rigorous modeling of packaged Schottky diodes. The implementation is first validated in the case of a diode connected to a voltage source. The SPICE simulator has been used to provide reference results. The same structure has also been used to establish the accuracy of the method, It has been demonstrated that such accuracy is significantly increased with respect to that of the conventional lumped-element-FDTD approach, Finally, the technique has been validated against measured results, showing a good agreement.
机译:最近,已经提出了一种新颖的方法,该方法允许将通用线性集总网络并入有限差分时域(FDTD)模拟器中。在本文中,此方法被扩展为表示单个FDTD网格单元中的两端非线性集总网络。特别地,扩展方法被应用于封装肖特基二极管的严格建模。首先在二极管连接到电压源的情况下验证该实现。 SPICE模拟器已用于提供参考结果。相同的结构也已用于确定该方法的准确性,已证明与传统的集总元件FDTD方法相比,该准确性显着提高。最后,该技术已针对测量结果进行了验证,表现出良好的协议。

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