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机译:45dB可变增益低噪声MMIC放大器
Microwave Electronic Laboratory, Chalmers University of Technology, Goteborg 41296, Sweden;
Input third-order intercept point (IIP3); low-noise amplifier (LNA); noise figure (NF); output third-order intercept point (OIP3); power compression; pseudomorphic high electron-mobility transistor (pHEMT); scattering parameters; variable-gain amplifier (VGA);
机译:采用0.25μmSiGe BiCMOS技术的1-12GHz可变增益低噪声放大器MMIC
机译:基于变质HEMT技术的243 GHz低噪声放大器MMIC和模块
机译:使用0.25μmALGaN / GaN HEMT技术在SiC衬底上的X波段MMIC低噪声放大器MMIC
机译:用于5 GHz频段无线应用的InGaP / GaAs HBT MMIC-高P1 dB,23/4 dB步进增益低噪声放大器和功率放大器
机译:InP HBT功率放大器MMIC在220GHz时可达到0.4W
机译:宽带低温微波低噪声放大器
机译:采用28nm CMOS的68.1至96.4GHz可变增益低噪声放大器