A Distortion-Cancelled Doherty High-Power Amplifier Using 28-V GaAs Heterojunction FETs for W-CDMA Base Stations

摘要

An L/S-band 330-W distortion-cancelled Doherty GaAs field-effect transistor (FET) amplifier has been successfully developed optimizing the main and peak amplifiers load impedance shift. The amplifier employed a pair of 28-V operation 150-W GaAs heterojunction FETs. It demonstrated low third-order intermodulation of -37 dBc with a drain efficiency of 42% at an output power of 49 dBm around 6-dB backoff level under the two-carrier wideband code-division multiple-access (W-CDMA) signals of 2.135 and 2.145 GHz. To our knowledge, these represent the best results ever reported among the simple high-power FET amplifiers for W-CDMA base stations. In addition, we proposed the evaluation techniques to obtain each AM-AM and AM-PM characteristics of the main and peak amplifiers in an operating Doherty amplifier, and have experimentally proven the distortion cancellation effect in the GaAs FET Doherty amplifier