Design and Fabrication of Multiband p-i-n Diode Switches With Ladder Circuits

摘要

Single-pole double-throw switches composed of p-i-n diodes are proposed for multiband operations. A ladder resonance circuit is introduced to simplify their configuration and to reduce the cost. The isolation greater than 20 dB and the insertion loss less than 2 dB are achieved in experiments at three frequency bands: 1.6, 2.5, and 5.8 GHz. Resonance frequency variations are investigated in detail for two types of switches consisting of: 1) lumped circuit elements and 2) semimicrostrip elements. The variations on the semimicrostrip configuration are about 25percent of those with lumped circuit elements. The proposed switch does not influence the switching speed and signal distortion characteristics. It also showed good temperature stability from -30 deg C to +85 deg C.