An in situ Tunable Diode Mounting Topology for High-Power $X$-Band Waveguide Switches

摘要

An in situ tunable diode mounting topology for waveguide switches is presented and utilized to design and fabricate two evanescent-mode X-band switching modules of approximately 15% and 25% fractional bandwidth. The ability of the mounting topology to operate in a high-power environment is verified in an evanescent-mode X-band switch using six packaged p-i-n diodes, successfully reflecting 4 kW of pulsed power