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首页> 外文期刊>IEEE Transactions on Microwave Theory and Techniques >A Build-in Self-Test Technique for RF Low-Noise Amplifiers
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A Build-in Self-Test Technique for RF Low-Noise Amplifiers

机译:射频低噪声放大器的内置自检技术

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A built-in self-test (BIST) technique suitable for RF low-noise amplifiers (LNAs) is presented in this paper. With fully integrated amplitude detectors and logarithmic amplifiers, the BIST module can be employed as a generic platform for gain extraction of the device-under-test (DUT) without expensive testing instruments, while maintaining a reasonable hardware overhead and minimum loading effects to the DUT. Using a 0.18-$mu{hbox {m}}$ CMOS process, a 5-GHz variable-gain LNA with the proposed BIST module is implemented. Based on the experimental results, on-chip gain extraction of the LNA has been demonstrated with an error less than 1 dB for various gain modes. The additional chip area required for the BIST functionality measures 0.042 ${hbox {mm}}^{2}$ , which is considerably small compared with the physical size of the RF amplifiers.
机译:本文介绍了一种适用于RF低噪声放大器(LNA)的内置自测(BIST)技术。借助完全集成的幅度检测器和对数放大器,BIST模块可以用作通用平台,无需昂贵的测试仪器即可对被测设备(DUT)进行增益提取,同时保持合理的硬件开销和对DUT的最小负载影响。使用0.18-μMCMOS工艺,可实现带有所建议的BIST模块的5 GHz可变增益LNA。根据实验结果,已经证明了LNA的片内增益提取,对于各种增益模式,其误差均小于1 dB。 BIST功能所需的额外芯片面积为0.042 $ {hbox {mm}} ^ {2} $,与RF放大器的物理尺寸相比非常小。

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