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首页> 外文期刊>Microwave Theory and Techniques, IEEE Transactions on >High-$Q$ Tunable Dielectric Resonator Filters Using MEMS Technology
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High-$Q$ Tunable Dielectric Resonator Filters Using MEMS Technology

机译:采用MEMS技术的高价Q $可调谐介电谐振滤波器

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This paper presents the design and implementation of a new class of high-$Q$ tunable dielectric resonator (DR) filters based on microelectromechanical systems (MEMS) technology. The use of MEMS tuning elements results in the compact implementation of the proposed filters with high- $Q$ and near to zero dc power consumption. The proposed filters consist of disk-shaped dielectric resonators with circular holes created in the center of each resonator. Three different filters are designed and measured based on different tuning elements. The first filter operates in TME mode at a center frequency of 4.72 GHz with a bandwidth of 21 MHz. MEMS contact-type switches are used as tuning elements for this filter. Measurement results demonstrate a tuning range of 160 MHz while the quality factor is above 510 (1200–510 over the tuning range). The other two implementations employ GaAs and MEMS varactors for tuning. The tunable filter with GaAs varactor has a continuous tuning range from 4.97 to 4.87 GHz with 65-MHz bandwidth and a $Q$ value from 660 to 170. The MEMS varactor-tuned filter has a better tuning performance from 5.20 to 5.02 GHz with higher $Q$ value from 800 to 550 over the tuning range. The proposed tuning approach is applicable to other modes at other frequencies of DR filters.
机译:本文介绍了一种基于微机电系统(MEMS)技术的新型高$ Q $可调谐介电谐振器(DR)滤波器的设计和实现。 MEMS调谐元件的使用导致了所提出的滤波器的紧凑实现,该滤波器具有高Q $和接近零的直流功耗。所提出的滤波器由盘形介电谐振器组成,在每个谐振器的中心都有圆孔。根据不同的调整元素,设计和测量了三种不同的滤波器。第一个滤波器在TME模式下以4.72 GHz的中心频率和21 MHz的带宽工作。 MEMS接触式开关用作该滤波器的调谐元件。测量结果表明,调谐范围为160 MHz,而品质因数高于510(调谐范围为1200–510)。其他两种实现采用GaAs和MEMS变容二极管进行调谐。带有GaAs变容二极管的可调滤波器具有从4.97至4.87 GHz的连续调谐范围,带宽为65 MHz,$ Q $值介于660至170之间。MEMS变容二极管调谐滤波器在5.20至5.02 GHz范围内具有更好的调谐性能,具有更高的调谐性能。 $ Q $的值在调整范围内从800到550。所提出的调谐方法适用于DR滤波器其他频率的其他模式。

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