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首页> 外文期刊>IEEE Transactions on Microwave Theory and Techniques >A 22–44-GHz Phased-Array Receive Beamformer in 45-nm CMOS SOI for 5G Applications With 3–3.6-dB NF
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A 22–44-GHz Phased-Array Receive Beamformer in 45-nm CMOS SOI for 5G Applications With 3–3.6-dB NF

机译:22-44-GHz相位阵列在45-NM CMOS SOI中接收波束形成器,适用于3-3.6-DB NF的5G应用

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This article presents a 22-44-GHz phased-array receive beamformer in the GlobalFoundries (GF) 45-nm CMOS SOI. The channel includes a wideband single-ended to differential low-noise amplifier (LNA), a 5-bit vector modulator (VM) phase shifter with a measured rms error of <6 degrees, an attenuator, and a variable gain amplifier (VGA) with 16 dB of gain control. The phased-array channel results in a peak gain of 26.3 dB and a 3-dB bandwidth of 20.5-44 GHz. The measured NF is 3-3.6 dB at 22-44 GHz with an IP1dB of -27.5 to -24.5 dBm and dc power consumption of 112 mW. To the best of our knowledge, this is the first wideband phased-array beamformer that covers the entire millimeter- wave 5G band with high linearity and should be suitable for next-generation 5G systems.
机译:本文在GlobalFoundries(GF)45-NM CMOS SOI中介绍了22-44-GHz相位阵列接收波束形成器。通道包括宽带单端到差分低噪声放大器(LNA),5位矢量调制器(VM)移相器,具有测量的<6度,衰减器和可变增益放大器(VGA)的RMS误差具有16 dB的增益控制。相控阵通道导致峰值增益为26.3 dB和3-DB带宽为20.5-44 GHz。测量的NF为22-44GHz为3-3.6dB,IP1DB为-27.5至-24.5 dBm,直流功耗为112 mW。据我们所知,这是第一个覆盖具有高线性度的整个毫米波5G带,并且应适用于下一代5G系统的第一宽带相控阵波束。

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