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A Microcontroller Unit-Based Electromagnetic Bandgap Control Scheme: Application for Enhancing Isolation in an Antenna Array and the EMI Scanner System Speed Thereof

机译:基于微控制器单元的电磁带隙控制方案:用于增强天线阵列中隔离的应用及其EMI扫描仪系统速度

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This article presents an adaptive electromagnetic bandgap (EBG) scheme based on a microcontroller unit (MCU) for reducing the mutual coupling in an antenna array designed for electromagnetic interference (EMI) scanner system enhancement (e.g., scanning speed, lower weight and size, and maintenance). For the first time, the EBG is configured via an MCU to enable the finest control of the equivalent lumped elements of the EBG, realizing optimal isolation between/among the antennas at very close distances (1.2 mm = 0.05 lambda at 10 GHz), which typically translates into longer distances between/among the antennas and/or more EBG elements (examples are referenced for comparison). The desired optimal isolation performance is realized by the EBG scheme combined with varactor diodes under the control of the MCU (later the microcontrolled EBG or MC-EBG) referencing a database compiled from the simulation results. In a simulation, the optimal isolation was found to be -58 dB ( S21) between two small-loop antennas (later the 2-SLA prototype) on a high-permittivity substrate ( epsilon r = 12.8, 4-mm thick). For the 4-SLA prototype devised here under identical substrate conditions, the optimal isolation points were found to be -30 dB ( S21/ S31) and -38 dB (S41). During the measurements, when compared under a EBG-standalone tuned isolation at 10 GHz, the measured isolation of the ultimately selected 4-SLA prototype was found to be better by more than 29 dB (-7 to -36 dB) between the closest SLAs ( S21/ S31) and by more than 35 dB (-18 to -53 dB) between the farthest SLAs (S41) at the same frequency. The accordant S-parametric results from both the simulation and the measurement are supported by the simulated H-field distribution (dBmA/m). The H-field from one SLA to the others was found to be reduced by more than 30 dB with the MC-EBG activated (MCU ON), and this is compared with the value of 13 dB from the tuned EBG-standalone case (MCU OFF). The final 4-SLA prototype was deployed in an actual 1 mm over-the-air (OTA) near-field EMI test at 10 GHz. The final field application results prove an enhancement in the EMI scanning speed (few hours versus few minutes) with a very low error rate ( clear EMI detection), with the ultimate goal of the MC-EBG thus successfully accomplished.
机译:本文介绍了一种基于微控制器单元(MCU)的自适应电磁带隙(EBG)方案,用于在设计用于电磁干扰(EMI)扫描系统增强(例如,扫描速度,较低的重量和尺寸,以及扫描速度和尺寸维护)。首次,通过MCU配置EBG以使得能够最精确地控制EBG的等效集成元件,在非常近距离(10G10GHz处的1.2mm = 0.05λ10.1.2mm= 0.05 lambda)之间实现最佳隔离。通常转换到天线和/或更多EBG元素之间的较长距离(参考比较的示例)。所需的最佳隔离性能由EBG方案与变容二极管联系在MCU(稍后的微控制EBG或MC-EBG)下的变容二极管,参考从模拟结果编译的数据库。在模拟中,在高介质基板上(epsilon r = 12.8,4mm厚)的两个小环天线(稍后的2-SLA原型)之间,发现最佳隔离为-58dB(S21)。对于在此设计的4-SLA原型在相同的基板条件下,发现最佳隔离点至-30dB(S21 / S31)和-38dB(S41)。在测量期间,在10GHz的EBG独立调谐隔离下进行比较时,最终选择的4-SLA原型的测量隔离被发现在最接近的SLA之间超过29dB(-7至-36dB) (S21 / S31)和在最远的SLA(S41)之间的35dB(-18至-53dB),在相同的频率之间。由模拟和测量介绍的致法的S-parametric结果由模拟的H场分布(DBMA / M)支持。发现从一个SLA到其他SLA的H字段通过MC-EBG激活(MCU ON)减少了超过30dB,并且将其与来自调谐的EBG-Standalone案例的值为13 dB(MCU)进行比较(MCU离开)。最终的4-SLA原型部署在10 GHz的实际1 mm上空(OTA)近场EMI测试中。最终的现场应用结果以非常低的错误率(清除EMI检测)为EMI扫描速度(几小时与几分钟)的增强,因此成功完成了MC-EBG的最终目标。

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