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首页> 外文期刊>IEEE Transactions on Microwave Theory and Techniques >Tunable Dual-Band Filter Based on Stub-Capacitor-Loaded Half-Mode Substrate Integrated Waveguide
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Tunable Dual-Band Filter Based on Stub-Capacitor-Loaded Half-Mode Substrate Integrated Waveguide

机译:基于存根电容器加载的半模基片集成波导的可调双频滤波器

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摘要

This paper presents an original and simple approach to the design of dual-band bandpass filters (BPFs) using the proposed stub-capacitor-loaded half-mode substrate-integrated waveguide (HMSIW) structure. The stub-capacitor-loaded HMSIW structure is investigated and a set of analytical equations is provided for the determination of center frequency, transmission zero, coupling coefficient, and external quality factor. Dual-band BPFs can be achieved by loading stub capacitor on the two sides of the HMSIW structure. The two passbands can be designed separately and controlled independently. To validate this method, a class of dual-band filters with a wide range of fractional bandwidth ratios of the two passbands is designed. Finally, a dual-band filter, with each passband tuned only by one control voltage, is fabricated and measured. The results show that the first passband can be tuned in a frequency range from 1.85 to 2.67 GHz (36.4%) without any effect on the second passband. In the meantime, the second passband varies from 3.84 to 5.34 GHz (32.7%) without any effect on the first passband. Good return loss is observed within a wide tuning range.
机译:本文提出了一种新颖,简单的方法来设计双频带带通滤波器(BPF),该方法使用了建议的存根电容器加载的半模基片集成波导(HMSIW)结构。研究了短接电容器加载的HMSIW结构,并提供了一组解析方程式,用于确定中心频率,传输零,耦合系数和外部品质因数。可以通过在HMSIW结构的两侧加载短线电容器来实现双频BPF。两个通带可以分别设计并独立控制。为了验证该方法,设计了一种具有两个通带的宽分数带宽比的双频带滤波器。最后,制造并测量一个双频带滤波器,每个通带仅通过一个控制电压进行调谐。结果表明,第一通带可以在1.85至2.67 GHz(36.4%)的频率范围内进行调谐,而对第二通带没有任何影响。同时,第二通带在3.84至5.34 GHz(32.7%)之间变化,而对第一通带没有任何影响。在宽的调谐范围内观察到良好的回波损耗。

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