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Fabrication of Fully Epitaxial Co $_{2}$Cr$_{0.6}$ Fe$_{0.4}$Al/MgO/Co

机译:完全外延Co $ _ {2} $ Cr $ _ {{0.6} $ Fe $ _ {0.4} $ Al / MgO / Co

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摘要

Fully epitaxial magnetic tunnel junctions (MTJs) of Co2Cr0.6Fe0.4Al (CCFA)/MgO/CCFA with exchange biasing were fabricated. The fabricated MTJs showed clear exchange-biased tunnel magnetoresistance (TMR) characteristics due to the CCFA/Ru/Co90Fe10/IrMn exchange-biased synthetic ferrimagnetic layer. The TMR characteristics were investigated as a function of in situ annealing temperature (Ta) for the upper CCFA layer. We obtained TMR ratios of 60% at room temperature (RT) and 238% at 4.2 K for MTJs with Ta of 400 degC, while those for MTJs with Ta of RT (i.e., having an as-deposited upper CCFA layer) were 17% at RT and 80% at 4.2 K. These results clearly suggest that the spin polarization of the as-deposited upper CCFA layer was significantly increased by in situ annealing
机译:制备了具有交换偏压的Co2Cr0.6Fe0.4Al(CCFA)/ MgO / CCFA的全外延磁性隧道结(MTJ)。由于CCFA / Ru / Co90Fe10 / IrMn交换偏置的合成铁磁层,制成的MTJ表现出清晰的交换偏置隧道磁阻(TMR)特性。针对上部CCFA层,研究了TMR特性与原位退火温度(Ta)的关系。对于Ta为400摄氏度的MTJ,我们在室温(RT)下的TMR比为60%,在4.2 K下为238%,而对于Ta为RT的MTJ(即具有沉积的上部CCFA层),它们的TMR比为17%。在室温下为4.2%,在室温下为80%。这些结果清楚地表明,通过原位退火可以显着增加沉积的上部CCFA层的自旋极化

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