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Continuous formation of CoCr films on PEN tape by facing targets sputtering

机译:通过面对靶材溅射在PEN胶带上连续形成CoCr膜

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In order to establish the technique of continuous formation of Co-Cr film on PEN (polyethylene naphthalate) tape, the sputtering and deposition area in the facing-targets sputtering (FTS) system was divided into two areas. In the first area, an initial underlayer as thin as 200 AA with a well-oriented c-axis was formed. In the second area, a main layer as thick as 1500 AA was formed on the initial underlayer at a rate of 500 AA/min; good c-axis orientation facilitated epitaxial growth. It was found that the FTS method can suppress the c-axis canting of the Co-Cr crystallites without a significant increase of total deposition time. Thermoplastic PEN tape can be used without heat damage, instead of the heat-resistant polyimide, as a substrate for Co-Cr films for the perpendicular magnetic recording tape.
机译:为了建立在PEN(聚萘二甲酸乙二醇酯)胶带上连续形成Co-Cr膜的技术,将面对靶溅射(FTS)系统中的溅射和沉积区域划分为两个区域。在第一个区域中,形成了一个薄的200 AA且具有良好c轴定向的初始底层。在第二区域中,以500 AA / min的速度在初始底层上形成厚达1500 AA的主层;良好的c轴方向有助于外延生长。发现FTS方法可以抑制Co-Cr微晶的c轴倾斜,而不会显着增加总沉积时间。热塑性PEN磁带可以用作热磁聚酰亚胺薄膜的Co-Cr膜的基材,而不会使用耐热聚酰亚胺代替热聚酰亚胺。

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