$_{1 - {rm x}}$Zr Magnetism of Rapidly Quenched Sm$_{1 - {rm x}}$Zr$_{{rm x}}$Co$_{5}$ Nanocrystalline Materials
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Magnetism of Rapidly Quenched Sm$_{1 - {rm x}}$Zr$_{{rm x}}$Co$_{5}$ Nanocrystalline Materials

机译:快速淬灭的Sm $ _ {1-{rm x}} $ Zr $ _ {{rm x}} $ Co $ _ {5} $纳米晶材料的磁性

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The effect of Zr addition on nanostructure and magnetic properties in nanocrystalline Sm$_{1 - {rm x}}$Zr$_{{rm x}}$Co$_{5}$ $({rm x} = 0-0.6)$ has been investigated. (Sm, Zr)Co $_{5}$ with the CaCu $_{5}$ structure was synthesized by melt spinning. The lattice parameters a and b decrease with x, whereas c increases. Thus, the unit cell volume of (Sm, Zr)Co$_{5}$ shrinks because the smaller Zr atoms occupy the sites of the larger Sm atoms. Zr addition decreases the grain size and induces the formation of planar defects. The coercivity decreases with x, due to weakening of magnetocrystalline anisotropy energy and effective intergrain exchange coupling. A very high coercivity of 39 kOe and energy product of 13.9 MGOe are obtained for ${rm x} = 0$. The remanence of (Sm, Zr)Co $_{5}$ increases with x. For ${rm x} leq 0.4$, the energy product slightly decreases with x. The results show that 40% of the Sm can be replaced by the less expensive Zr, with an energy-product reduction of only 10%. In addition, the planar defects are responsible for the change of coercivity mechanism from the nucleation-type of reverse domain for the ${rm x} = 0$ to the pinning-type of domain wall for the ${rm x} = 0.4$.
机译:Zr的添加对纳米晶Sm的纳米结构和磁性能的影响 $ _ {1-{rm x}} $ Zr <公式Formulatype =“ inline”> $ _ {{{rm x}} $ Co $ _ {5} $ $({rm x} = 0-0.6)$ 具有被调查。 (Sm,Zr)Co $ _ {5} $ ,其中CaCu $ _ {5} $ 结构。晶格参数a和b随x减小,而c增大。因此,(Sm,Zr)Co $ _ {5} $ 的晶胞体积会缩小,因为较小的Zr原子占据了更大的Sm原子的位置。 Zr的添加减小了晶粒尺寸并引起了平面缺陷的形成。由于磁晶各向异性能的减弱和有效的晶间交换耦合,矫顽力随x减小。对于<公式公式类型=“ inline”> $ {rm x} = 0 $ ,可以获得非常高的39 kOe矫顽力和13.9 MGOe的能量积。 (Sm,Zr)Co $ _ {5} $ 的剩磁随x增大。对于 $ {rm x} leq 0.4 $ ,能量乘积随x略有减小。结果表明,可以用价格便宜的Zr代替40%的Sm,而能源产品的减少量仅为10%。此外,对于<公式>,{ref x} = $ 0,平面缺陷会导致矫顽力机制从反向域的成核类型改变。 tex> $ {rm x} = 0.4 $ 的域壁的固定类型。

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