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Improved bias and stability in dual-exchange-biased unshielded magnetoresistive heads

机译:改善了双交流偏置非屏蔽磁阻磁头的偏置和稳定性

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摘要

Data are presented on dual-exchange-biased NiFe-TbCo UMR (unshielded magnetoresistive) tape heads with improved signal response and process stability. It was found that a Si/sub 3/N/sub 4/ passivation layer offered better stability of the exchange bias through head processing than SiO/sub 2/. In order to improve sensor sensitivity, the longitudinal component of the exchange bias was reduced by increasing the exchange angle to 75 degrees from the sense current direction. This resulted in a +6-dB improvement in signal over previous heads without sacrificing Barkhausen-noise-free operation in narrow trackwidths. Heads with trackwidths as narrow as 8 mu m were shown to operate at linear densities of up to 50 kFCI with excellent signal-to-noise ratios (<45 dB). Investigations of different passivation materials showed Si/sub 3/N/sub 4/ to provide the best protection against environmental corrosion and thermally induced oxidation of the TbCo layer.
机译:数据以双交换偏置的NiFe-TbCo UMR(非屏蔽磁阻)胶带头表示,具有改善的信号响应和工艺稳定性。发现Si / sub 3 / N / sub 4 /钝化层通过头处理提供了比SiO / sub 2 /更好的交换偏压稳定性。为了提高传感器灵敏度,通过将交换角度从感应电流方向增加到75度,可以减少交换偏压的纵向分量。这导致信号比以前的磁头提高了+6 dB,而又不牺牲窄轨道宽度的Barkhausen无噪声操作。磁头宽度窄至8μm的磁头以高达50 kFCI的线性密度工作,具有出色的信噪比(<45 dB)。对不同钝化材料的研究表明,Si / sub 3 / N / sub 4 /可以提供最佳保护,以防止TbCo层受到环境腐蚀和热诱导氧化。

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