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Effect of added elements M(M=V, Cr, Mn, Co, Ni) on soft magnetic properties of Fe-Zr-N films

机译:添加元素M(M = V,Cr,Mn,Co,Ni)对Fe-Zr-N薄膜软磁性能的影响

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摘要

The additives M(M=V, Cr, Mn, Co, Ni), which are partially soluble in alpha -Fe, were added to Fe-Zr-N film, which exhibits excellent soft magnetic properties. The effects of adding these M elements on soft magnetic properties are discussed. All of the film containing additives within 10 at.% maintained excellent soft magnetic properties. All of the additives changed the saturation magnetostriction from negative to positive, and zero magnetostriction film was obtained by the addition of M between 0.5 and 1.5 at.%. The increase in electrical resistivity for film containing V, Cr, Mn, Ni is considered to be effective for reducing eddy current loss. Saturation magnetic flux densities (B/sub s/) were maintained more than 13 kG by addition of M within 10 at.%. The addition of Co slightly increased B/sub s/. These results suggest that the addition of these additives is effective for applications involving magnetic heads, used in high density magnetic recording systems because of their high resistivity and soft magnetic properties without large reductions in B/sub s/.
机译:将部分溶于α-Fe的添加剂M(M = V,Cr,Mn,Co,Ni)添加到具有出色软磁性能的Fe-Zr-N膜中。讨论了添加这些M元素对软磁性能的影响。所有含添加剂含量在10 at。%以内的薄膜均保持出色的软磁性能。所有的添加剂将饱和磁致伸缩从负变为正,通过添加0.5至1.5 at。%的M可获得零磁致伸缩膜。包含V,Cr,Mn,Ni的膜的电阻率的增加被认为对于减少涡流损耗是有效的。通过在10 at。%之内添加M,饱和磁通密度(B / sub s /)保持在13 kG以上。 Co的添加稍微增加了B / sub s /。这些结果表明,这些添加剂的添加对于涉及高密度磁记录系统中使用的磁头的应用是有效的,因为它们具有高电阻率和软磁特性,而不会大幅度降低B / subs /。

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