机译:茎断层扫描的结尺寸为20nm的CoFeB / MgO的垂直MTJ的结构分析
Center for Innovative Integrated Electronic Systems Tohoku University Sendai Japan;
Toray Research Center Inc. Otsu Japan;
Toray Research Center Inc. Otsu Japan;
Nissin Ion Equipment Company Ltd. Kyoto Japan;
Nissin Ion Equipment Company Ltd. Kyoto Japan;
Center for Innovative Integrated Electronic Systems Tohoku University Sendai Japan;
Center for Innovative Integrated Electronic Systems Tohoku University Sendai Japan;
Center for Innovative Integrated Electronic Systems Tohoku University Sendai Japan;
Center for Innovative Integrated Electronic Systems Tohoku University Sendai Japan;
Magnetic tunneling; Tomography; Etching; Resistance; Junctions; Scanning electron microscopy; Tunneling magnetoresistance;
机译:垂直磁各向异性的MgO基CoFeB隧道结的尺寸依赖性效应
机译:低于50nm的垂直CoFeB / MgO基磁性隧道结的图案
机译:Ta Co_(40)Fe_(40)B_(20)MgAl_2O_4结构和垂直CoFeB∣MgAl_2O_4∣CoFeB磁性隧道结中的垂直磁各向异性
机译:不同结直径的垂直各向异性CoFeB / MgO基磁性隧道结的写错误率
机译:大学间体育部门系统规模与结构分化之间的关系分析。
机译:用于人工神经元的双MgO垂直磁隧道结
机译:低温功能CofeB / MgO基垂直磁隧道结,用于低温非易失性随机存取存储器