机译:硬掩模材料对双CoFeB / MgO接口垂直MTJS磁性的影响
Tohoku Univ Ctr Innovat Integrated Elect Syst Sendai Miyagi 9800854 Japan;
Tohoku Univ Ctr Innovat Integrated Elect Syst Sendai Miyagi 9800854 Japan;
Tohoku Univ Ctr Innovat Integrated Elect Syst Sendai Miyagi 9800854 Japan;
Tohoku Univ Ctr Innovat Integrated Elect Syst Sendai Miyagi 9800854 Japan|Tohoku Univ Ctr Sci & Innovat Spintron Sendai Miyagi 9808577 Japan|Tohoku Univ Ctr Spintron Res Network Sendai Miyagi 9808577 Japan;
Tohoku Univ Ctr Innovat Integrated Elect Syst Sendai Miyagi 9800854 Japan|Tohoku Univ Ctr Sci & Innovat Spintron Sendai Miyagi 9808577 Japan|Tohoku Univ Ctr Spintron Res Network Sendai Miyagi 9808577 Japan;
Tohoku Univ Ctr Innovat Integrated Elect Syst Sendai Miyagi 9800854 Japan|Tohoku Univ Ctr Spintron Res Network Sendai Miyagi 9808577 Japan|Tohoku Univ Grad Sch Engn Sendai Miyagi 9808579 Japan;
Tohoku Univ Ctr Innovat Integrated Elect Syst Sendai Miyagi 9800854 Japan;
Tohoku Univ Ctr Innovat Integrated Elect Syst Sendai Miyagi 9800854 Japan|Tohoku Univ Ctr Sci & Innovat Spintron Sendai Miyagi 9808577 Japan|Tohoku Univ Ctr Spintron Res Network Sendai Miyagi 9808577 Japan|Tohoku Univ Res Inst Elect Commun Sendai Miyagi 9808577 Japan;
Tohoku Univ Ctr Innovat Integrated Elect Syst Sendai Miyagi 9800854 Japan|Tohoku Univ Ctr Sci & Innovat Spintron Sendai Miyagi 9808577 Japan|Tohoku Univ Ctr Spintron Res Network Sendai Miyagi 9808577 Japan|Tohoku Univ Res Inst Elect Commun Sendai Miyagi 9808577 Japan|Tohoku Univ Grad Sch Engn Sendai Miyagi 9808579 Japan;
Diffusion; hard mask (HM); magnetic tunnel junction; perpendicular anisotropy; spin-transfer-torque magnetoresistive random access memories (STT-MRAM); thermal tolerance;
机译:[Pd / Co] / CoFeB / MgO / CoFeB / [Co / Pd]垂直MTJ薄膜中CoFeB层对磁性能和磁畴结构的调控
机译:Ta插入双CoFeB / MgO界面MTJ的STT-MRAM垂直各向异性的优化
机译:底层材料对CoFeB / MgO磁性隧道结中电场控制的垂直磁各向异性的影响
机译:具有双CoFeB / MgO界面和阶梯蚀刻结构的垂直MTJ的缩放特性
机译:具有MgO隧道势垒的垂直磁性隧道结
机译:在垂直MgO / CoFeB / W / CoFeB / MgO记录框中增强超薄W空间层的热稳定性
机译:聚合物缓冲层上垂直磁化薄膜的生长和mgO | CoFeB界面上电压引起的磁各向异性变化