Two types of patterned, unshielded Giant MagnetoResistance (GMR) spin valve sensors have been fabricated: nano-layered NiFe/Co/Cu/Co/NiFe and simpler NiFe/Cu/Co spin valves. GMR values of 7.6% for /spl Delta/H=10 Oe were measured for the nano-layered structures on coupons. Transfer curves in uniform fields were obtained and were in agreement with theoretical expectations. The sensors were highly linear and well biased. Optimum biasing of the free layer in the spin valve sensor has new features over that in AMR sensors. These were explored in shielded as well as unshielded spin valves using micromagnetic simulation.
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机译：已经制造出两种类型的带图案的非屏蔽巨磁电阻（GMR）自旋阀传感器：纳米层NiFe / Co / Cu / Co / NiFe和更简单的NiFe / Cu / Co自旋阀。对于试样上的纳米层结构，测量了/ spl Delta / H = 10 Oe的GMR值为7.6％。获得了均匀场中的传递曲线，并与理论预期相符。传感器高度线性且偏置良好。自旋阀传感器中自由层的最佳偏置具有AMR传感器中的新功能。使用微磁模拟在屏蔽和非屏蔽自旋阀中进行了探索。
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