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Magnetic anisotropy of sputtered FeN films due to anisotropic columnar growth of grains

机译:晶粒各向异性柱状生长引起的溅射FeN薄膜的磁各向异性

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FeN thin films were deposited by RF reactive diode sputtering to investigate magnetic anisotropy variation due to substrate tilt up to 45/spl deg/ during the film deposition. Their magnetic and morphological properties were measured by vibrating sample magnetometer (VSM), scanning electron microscope (SEM) and atomic force microscope (AFM). As the substrate tilt angle was increased, an anisotropy in the direction parallel to the substrate tilt pivot edge was induced. SEM micrographs show columnar growth of grains elongated along the substrate tilt pivot edges. The magnitude of the anisotropy was estimated by assuming the film surface roughness ("hills") are oblate ellipsoids. The shape anisotropy thus was estimated at 26 Oe at 45/spl deg/ substrate tilt, which corresponded reasonably well with the measured anisotropy change of 30 Oe.
机译:FeN薄膜通过RF反应二极管溅射沉积,以研究在薄膜沉积过程中由于衬底倾斜高达45 / spl deg /而引起的磁各向异性变化。通过振动样品磁力计(VSM),扫描电子显微镜(SEM)和原子力显微镜(AFM)测量了它们的磁性和形态特性。随着基板倾斜角的增加,在平行于基板倾斜枢轴边缘的方向上引起各向异性。 SEM显微照片显示了沿基底倾斜枢轴边缘伸长的晶粒的柱状生长。通过假设膜表面粗糙度(“山”)是扁椭圆形来估计各向异性的大小。因此,在45 / spl度/基板倾斜下,形状各向异性估计为26 Oe,与测量的30 Oe各向异性变化相当合理。

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