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Highly Sensitive CMOS Magnetoimpedance Sensor Using Miniature Multi-Core Head Based on Amorphous Wire

机译:基于非晶线的微型多芯磁头的高灵敏度CMOS磁阻传感器

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We newly report a highly sensitive CMOS magnetoimpedance (MI) sensor based on a miniature multi-core head (~2 mm). The miniature head consists of 13 μm diameter amorphous wires and pick-up coils totaling 250 turns. In this paper, the sensitivity and noise level of the prototype sensor is investigated. We showed that the noise floor of the prototype sensor is lower than 100 pT/Hz for the frequency range of 20-500 Hz. We estimated the peak-induced voltage at the pick-up coil on the basis of off-diagonal impedance theory. The results obtained in this paper will be useful for designing a highly sensitive MI sensor based on a miniature multi-core head with a CMOS pulse circuit.
机译:我们最新报告了基于微型多芯磁头(〜2 mm)的高灵敏度CMOS磁阻(MI)传感器。微型头由直径为13μm的非晶线和拾取线圈组成,共250匝。本文研究了原型传感器的灵敏度和噪声水平。我们表明,在20-500 Hz的频率范围内,原型传感器的本底噪声低于100 pT / Hz。我们根据对角线阻抗理论估算了拾波线圈的峰值感应电压。本文获得的结果对于基于带有CMOS脉冲电路的微型多核磁头设计高灵敏度MI传感器非常有用。

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